Integrated Silicon Solution, Inc. Memory IS49NLS18160-33B

Description
DRAM Memory IC 288Mb (16M x 18) Parallel 300MHz 20ns 144-FCBGA (11x18.5)
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Description
DRAM Memory IC 288Mb (16M x 18) Parallel 300MHz 20ns 144-FCBGA (11x18.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLS18160-33B-ND - DigiKey
Thief River Falls, MN, United States
DRAM Memory IC 288Mb (16M x 18) Parallel 300MHz 20ns 144-FCBGA (11x18.5)

DRAM Memory IC 288Mb (16M x 18) Parallel 300MHz 20ns 144-FCBGA (11x18.5)

Buy Now Datasheet
Memory - IS49NLS18160-33B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS49NLS18160-33B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS18160-33B
Integrated Circuits (ICs) - Memory IS49NLS18160-33B
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS49NLS18160-33B-ND IS49NLS18160-33B IS49NLS18160-33B IS49NLS18160-33B
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 288000 kbits 288000 kbits 288000 kbits 288000 kbits
Package Type 144-TFBGA BGA; 144-TFBGA BGA
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