Integrated Silicon Solution, Inc. Memory IS49NLS18160-25BI

Description
IC DRAM 288MBIT PAR 144FCBGA
Datasheet
Description
IC DRAM 288MBIT PAR 144FCBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site Datasheet
Memory - IS49NLS18160-25BI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS49NLS18160-25BI IS49NLS18160-25BI
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Density 288000 kbits 288000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 811600-73670880 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
 - 27128A-20/B - Rochester Electronics
Specs
Memory Category EPROM
Package Type DIP; CDIP
View Details
4 suppliers
Integrated Circuits (ICs) - Memory - Memory - NMC27C256BN150 - Acme Chip Technology Co., Limited
Specs
Memory Category EPROM; Non-Volatile
Density 256 kbits
Supply Voltage 28-DIP (0.600, 15.24mm)
View Details
2 suppliers