RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)
IC DRAM 576MBIT PAR 144FCBGA
IC DRAM 576MBIT PAR 144FCBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS49NLC96400-33BLI | IS49NLC96400-33BLI | IS49NLC96400-33BLI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 576000 kbits | 576000 kbits | 576000 kbits |
