Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS49NLC96400-33BL

Description
IC DRAM 576MBIT PAR 144FCBGA
Datasheet
Description
IC DRAM 576MBIT PAR 144FCBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS49NLC96400-33BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLC96400-33BL
Integrated Circuits (ICs) - Memory IS49NLC96400-33BL
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site
Memory - IS49NLC96400-33BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLC96400-33BL IS49NLC96400-33BL IS49NLC96400-33BL
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 300 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - 93425DMQB30 - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
4 suppliers
SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 27S185DM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details