Integrated Silicon Solution, Inc. Memory IS49NLC36800-25EWBLI

Description
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 15 ns 144-TWBGA (11x18.5)
Datasheet
Description
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 15 ns 144-TWBGA (11x18.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLC36800-25EWBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 15 ns 144-TWBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 15 ns 144-TWBGA (11x18.5)

Buy Now Datasheet
IC DRAM 288MBIT PAR 144TWBGA

IC DRAM 288MBIT PAR 144TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS49NLC36800-25EWBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLC36800-25EWBLI
Integrated Circuits (ICs) - Memory IS49NLC36800-25EWBLI
IC DRAM 288MBIT PAR 144TWBGA

IC DRAM 288MBIT PAR 144TWBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLC36800-25EWBLI IS49NLC36800-25EWBLI IS49NLC36800-25EWBLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 15 ns 15 ns 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 288000 kbits 288000 kbits 288000 kbits
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