Integrated Silicon Solution, Inc. Memory IS49NLC36160-25BL

Description
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet
Description
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLC36160-25BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS49NLC36160-25BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLC36160-25BL
Integrated Circuits (ICs) - Memory IS49NLC36160-25BL
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLC36160-25BL IS49NLC36160-25BL IS49NLC36160-25BL
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 576000 kbits 576000 kbits 576000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - 27C128-15 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Density 128 kbits
View Details
Memory - 8 611 200 833 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers