Integrated Silicon Solution, Inc. Memory IS49NLC18320-25EBLI

Description
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 15 ns 144-FCBGA (11x18.5)
Description
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 15 ns 144-FCBGA (11x18.5)
Datasheet
Datasheet Summary
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The IS49NLC18320-25EBLI is a 576Mb RLDRAM 2 memory device from Quarktwin Technology Ltd., featuring a 32M x 18 organization. It operates at a clock frequency of 400 MHz, providing a data rate of 800 Mb/s per pin and a peak bandwidth of 28.8 Gb/s. The device has a reduced cycle time of 15 ns and supports 8 internal banks, allowing for efficient data management. It features a non-multiplexed address interface and a programmable read latency, row cycle time, and burst sequence length, which can optimize performance for various applications. The memory operates with a supply voltage of 2.5V and has HSTL I/O compatibility with a nominal voltage of 1.5V or 1.8V. The IS49NLC18320-25EBLI is available in a 144-ball lead-free WBGA package and is suitable for both commercial and industrial temperature ranges, making it versatile for different project requirements.

Datasheet Summary
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The IS49NLC18320-25EBLI is a 576Mb RLDRAM 2 memory device from Quarktwin Technology Ltd., featuring a 32M x 18 organization. It operates at a clock frequency of 400 MHz, providing a data rate of 800 Mb/s per pin and a peak bandwidth of 28.8 Gb/s. The device has a reduced cycle time of 15 ns and supports 8 internal banks, allowing for efficient data management. It features a non-multiplexed address interface and a programmable read latency, row cycle time, and burst sequence length, which can optimize performance for various applications. The memory operates with a supply voltage of 2.5V and has HSTL I/O compatibility with a nominal voltage of 1.5V or 1.8V. The IS49NLC18320-25EBLI is available in a 144-ball lead-free WBGA package and is suitable for both commercial and industrial temperature ranges, making it versatile for different project requirements.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLC18320-25EBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 15 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 15 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS49NLC18320-25EBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLC18320-25EBLI
Integrated Circuits (ICs) - Memory IS49NLC18320-25EBLI
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLC18320-25EBLI IS49NLC18320-25EBLI IS49NLC18320-25EBLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 15 ns 15 ns 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 576000 kbits 576000 kbits 576000 kbits
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