Integrated Silicon Solution, Inc. Memory IS49NLC18160-33BL

Description
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)
Datasheet
Description
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLC18160-33BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS49NLC18160-33BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLC18160-33BL
Integrated Circuits (ICs) - Memory IS49NLC18160-33BL
IC DRAM 288MBIT PAR 144TWBGA

IC DRAM 288MBIT PAR 144TWBGA

Supplier's Site
IC DRAM 288MBIT PAR 144TWBGA

IC DRAM 288MBIT PAR 144TWBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLC18160-33BL IS49NLC18160-33BL IS49NLC18160-33BL
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 288000 kbits 288000 kbits 288000 kbits
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