Integrated Silicon Solution, Inc. Memory IS46TR16640ED-15HBLA2

Description
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 667MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet
Description
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 667MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-1470-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 667MHz 20ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 667MHz 20ns 96-TWBGA (9x13)

Buy Now Datasheet
SDRAM - DDR3 Memory IC 1Gbit Parallel 667 MHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 1Gbit Parallel 667 MHz 20 ns 96-TWBGA (9x13)

Buy Now
Integrated Circuits (ICs) - Memory - IS46TR16640ED-15HBLA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46TR16640ED-15HBLA2
Integrated Circuits (ICs) - Memory IS46TR16640ED-15HBLA2
IC DRAM 1GBIT PARALLEL 96TWBGA

IC DRAM 1GBIT PARALLEL 96TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 96TWBGA

IC DRAM 1GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-1470-ND IS46TR16640ED-15HBLA2 IS46TR16640ED-15HBLA2 IS46TR16640ED-15HBLA2
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 96-TFBGA BGA; 96-TFBGA BGA
Supply Voltage 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28225511 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers
Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details