Integrated Silicon Solution, Inc. Memory IS43TR16640C-125JBLI-TR

Description
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet
Description
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43TR16640C-125JBLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS43TR16640C-125JBLI-TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43TR16640C-125JBLI-TR
Memory IC and Storage Component 774-IS43TR16640C-125JBLI-TR
IC DRAM 1GBIT PARALLEL 96TWBGA Product overview: IS43TR16640C-125JBLI -TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR16640C-125 JBLI-TR can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 96TWBGA Product overview: IS43TR16640C-125JBLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR16640C-125JBLI-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1378668-IS43TR16640C-125JBLI-TR - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1378668-IS43TR16640C-125JBLI-TR
Integrated Circuits (ICs) - Memory - Memory 1378668-IS43TR16640C-125JBLI-TR
Win Source Part Number: 1378668-IS43TR16640C -125JBLI-TR Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Temperature Range - Operating: -40°C ~ 95°C (TC) Fake Threat In the Open Market: 45 pct. MSL Level: 3 (168 Hours) Mfr: ISSI, Integrated Silicon Solution Inc Series: Automotive, AEC-Q100 Product Status: Active Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13) Base Product Number: IS43TR16640 Technology: SDRAM - DDR3 Mounting Type: Surface Mount HTSUS: 8542.32.0032 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.425V ~ 1.575V Memory Type: Volatile Memory Format: DRAM Memory Size: 1Gbit Memory Organization: 64M x 16 Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns

Win Source Part Number: 1378668-IS43TR16640C-125JBLI-TR
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 95°C (TC)
Fake Threat In the Open Market: 45 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Series: Automotive, AEC-Q100
Product Status: Active
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)
Base Product Number: IS43TR16640
Technology: SDRAM - DDR3
Mounting Type: Surface Mount
HTSUS: 8542.32.0032
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.425V ~ 1.575V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 1Gbit
Memory Organization: 64M x 16
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 96TWBGA

IC DRAM 1GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory IS43TR16640C-125JBLI-TR
IC DRAM 1GBIT PARALLEL 96TWBGA

IC DRAM 1GBIT PARALLEL 96TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 96TWBGA

IC DRAM 1GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS43TR16640C-125JBLI-TR-ND 774-IS43TR16640C-125JBLI-TR 1378668-IS43TR16640C-125JBLI-TR IS43TR16640C-125JBLI-TR IS43TR16640C-125JBLI-TR IS43TR16640C-125JBLI-TR IS43TR16640C-125JBLI-TR
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip SDRAM - DDR3; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 C (-40 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-TFBGA 96-TFBGA BGA BGA; 96-TFBGA
Supply Voltage 1.425V ~ 1.575V 1.425 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V
Access Time 0.2250 ns 20 ns 20 ns 20 ns 20 ns 20 ns
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