IC DRAM 8GBIT PARALLEL 96TWBGA
8G, 1.35V, DDR3L, 512Mx16, 1600M Product overview: IS43TR16512BL-125KBL
8G, 1.35V, DDR3L, 512Mx16, 1600M
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-TWBGA (10x14)
8G, 1.35V, DDR3L, 512Mx16, 1600M
| DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-IS43TR16512BL-125KBLI-TR-ND | 774-IS43TR16512BL-125KBLI-TR | IS43TR16512BL-125KBLI-TR | IS43TR16512BL-125KBLI-TR | IS43TR16512BL-125KBLI-TR |
| Product Name | Memory | 1.35V Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR3L |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 C (-40 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |
| Package Type | 96-TFBGA | BGA; 96-TFBGA | 96-TFBGA | ||
| Supply Voltage | 1.283V ~ 1.45V | 1.283 | Surface Mount | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
| Access Time | 0.2250 ns | 20 ns | 20 ns |