Integrated Silicon Solution, Inc. Memory IS43TR16256B-093NBL

Description
IC DRAM 4GBIT PARALLEL 96TWBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 96TWBGA
Datasheet

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Description
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IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Memory - IS43TR16256B-093NBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 1.066 GHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 4Gbit Parallel 1.066 GHz 20 ns 96-TWBGA (9x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43TR16256B-093NBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43TR16256B-093NBL
Integrated Circuits (ICs) - Memory IS43TR16256B-093NBL
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43TR16256B-093NBL IS43TR16256B-093NBL IS43TR16256B-093NBL
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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