Integrated Silicon Solution, Inc. Memory IS43TR16256A-125KBL

Description
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet
Description
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43TR16256A-125KBL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS43TR16256A-125KBL - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43TR16256A-125KBL
Memory IC and Storage Component 774-IS43TR16256A-125KBL
IC DRAM 4GBIT PARALLEL 96TWBGA Product overview: IS43TR16256A-125KBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR16256A-125 KBL can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT PARALLEL 96TWBGA Product overview: IS43TR16256A-125KBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR16256A-125KBL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Memory - SDRAM - IS43TR16256A-125KBL - 1189072-IS43TR16256A-125KBL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43TR16256A-125KBL
1189072-IS43TR16256A-125KBL
Memory - SDRAM - IS43TR16256A-125KBL 1189072-IS43TR16256A-125KBL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 1189072-IS43TR16256A -125KBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR3 Memory Type: Volatile Memory Size: 4Gb (256M x 16) Access Time: 20ns Categories: Integrated Circuits Supplier Device Package: 96-TWBGA (9x13) Temperature Range - Operating: 0°C ~ 95°C Memory Format: DRAM Manufacturer Homepage: www.issi.com Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 96-TFBGA Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 190 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.425V ~ 1.575V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189072-IS43TR16256A-125KBL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 4Gb (256M x 16)
Access Time: 20ns
Categories: Integrated Circuits
Supplier Device Package: 96-TWBGA (9x13)
Temperature Range - Operating: 0°C ~ 95°C
Memory Format: DRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 96-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 190
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.425V ~ 1.575V

Buy Now
Memory - IS43TR16256A-125KBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

Buy Now Datasheet
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS43TR16256A-125KBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS43TR16256A-125KBL
Integrated Circuits (ICs) - Memory - Memory IS43TR16256A-125KBL
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43TR16256A-125KBL-ND 774-IS43TR16256A-125KBL IS43TR16256A-125KBL 1189072-IS43TR16256A-125KBL IS43TR16256A-125KBL IS43TR16256A-125KBL IS43TR16256A-125KBL
Product Name Memory Memory IC and Storage Component Memory Memory - SDRAM - IS43TR16256A-125KBL Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR3; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 96-TFBGA BGA; Tray 96-TFBGA BGA; 96-TFBGA BGA
Supply Voltage 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 0degC ~ 95degC (TC)
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