IC DRAM 2GBIT PARALLEL 96TWBGA
2G, 1.35V, DDR3L, 128Mx16, 1600M Product overview: IS43TR16128CL-125KBL
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)
2G, 1.35V, DDR3L, 128Mx16, 1600M
SDRAM, 2GBIT, BGA-96; DRAM Memory Configuration:128M x 16bit; Memory Case Style:BGA; No. of Pins:96Pins; IC Interface Type:Parallel; Access Time:255ps; Page Size:2048Byte; Operating Temperature Min:0°C; Operating Temperature RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-IS43TR16128CL-125KBL-ND | 774-IS43TR16128CL-125KBL | IS43TR16128CL-125KBL | IS43TR16128CL-125KBL | 65AC6020 |
| Product Name | Memory | 1.35V Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Sdram, 2Gbit, Bga-96; Dram Memory Configuration Integrated Silicon Solution (Issi) |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 C (32 F) | 0 to 95 C (32 to 203 F) | 0 C (32 F) | |
| Package Type | 96-TFBGA | BGA; 96-TFBGA | BGA | ||
| Supply Voltage | 1.283V ~ 1.45V | 1.283 | 1.283V ~ 1.45V | Surface Mount | |
| Access Time | 0.2250 ns | 20 ns | 0.2550 ns |
