Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921685-IS43TR16128C-
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800 MHz 20 ns 96-TWBGA (9x13)
Package: 96-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: IS43TR16128
Categories: Integrated Circuits (ICs)
Case / Package: 96-TWBGA (9x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 190
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
IC DRAM 2GBIT PARALLEL 96TWBGA Product overview: IS43TR16128C-125KBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR16128C-125
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
DRAM, 128M X 16BIT, BGA-96; DRAM Type:DDR3; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:800MHz; Memory Case Style:BGA; No. of Pins:96Pins; Supply Voltage Nom:1.5V; Access Time:-; MSL:MSL 3 - 168 hours RoHS Compliant: Yes
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)
IC DRAM 2GBIT PARALLEL 96TWBGA
IC DRAM 2GBIT PARALLEL 96TWBGA
IC DRAM 2GBIT PARALLEL 96TWBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 921685-IS43TR16128C-125KBL | 774-IS43TR16128C-125KBL | IS43TR16128C-125KBL-ND | 81Y1356 | IS43TR16128C-125KBL | IS43TR16128C-125KBL | IS43TR16128C-125KBL | IS43TR16128C-125KBL |
| Product Name | Memory - SDRAM - IS43TR16128C-125KBL | Memory IC and Storage Component | Memory | Dram, 128M X 16Bit, Bga-96; Dram Type Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR3; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 C (32 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Package Type | BGA; 96-TWBGA (9x13) | 96-TFBGA | BGA | BGA; 96-TFBGA | BGA | 96-TFBGA | ||
| Access Time | 0.2250 ns | 20 ns | 20 ns | 20 ns | 20 ns | |||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits |
