Integrated Silicon Solution, Inc. Memory IS43TR16128BL-125KBL

Description
SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet
Description
SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43TR16128BL-125KBL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 96TWBGA

IC DRAM 2GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Memory - IS43TR16128BL-125KBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43TR16128BL-125KBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43TR16128BL-125KBL
Integrated Circuits (ICs) - Memory IS43TR16128BL-125KBL
IC DRAM 2GBIT PARALLEL 96TWBGA

IC DRAM 2GBIT PARALLEL 96TWBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43TR16128BL-125KBL-ND IS43TR16128BL-125KBL IS43TR16128BL-125KBL IS43TR16128BL-125KBL
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 96-TFBGA BGA; 96-TFBGA BGA
Supply Voltage 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 2020-HYB25L512160AC-7.5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; DRAM Chip
Access Time 6 ns
Cycle Time 14 ns
View Details
2 suppliers
Flash Memory - 1882864 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 6116SA45TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details