The IS43TR16128B-125KBL is a 2Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a 128Mx16 configuration. It operates at a standard voltage of 1.5V ¬± 0.075V and supports low voltage operation at 1.35V. The memory chip is designed for high-speed data transfer rates, with a system frequency of up to 1600 MT/s and a CAS latency of 11. It includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, as well as various latency settings. The device is available in a 96-ball BGA package measuring 9mm x 13mm and is suitable for commercial temperature ranges from 0¬8C to +95¬8C. It also features advanced functionalities such as auto self-refresh, partial array self-refresh, and dynamic on-die termination. The IS43TR16128B-125KBL is backward compatible with slower speed options, making it versatile for various applications.
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
IC DRAM 2GBIT PARALLEL 96TWBGA
IC DRAM 2GBIT PARALLEL 96TWBGA Product overview: IS43TR16128B-125KBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR16128B-125
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 714592-IS43TR16128B-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 20ns
Categories: Integrated Circuits
Supplier Device Package: 96-TWBGA (9x13)
Temperature Range - Operating: 0°C ~ 95°C
Memory Format: DRAM
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 96-TFBGA
Alternative Parts (Cross-Reference): MT41J128M16HA-125IT:
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 190
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.425V ~ 1.575V
IC DRAM 2GBIT PARALLEL 96TWBGA
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)
IC DRAM 2GBIT PARALLEL 96TWBGA
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-1483-ND | IS43TR16128B-125KBL | 774-IS43TR16128B-125KBL | 714592-IS43TR16128B-125KBL | IS43TR16128B-125KBL | IS43TR16128B-125KBL | IS43TR16128B-125KBL |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - SDRAM - IS43TR16128B-125KBL | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | SDRAM - DDR3; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |
| Package Type | 96-TFBGA | 96-TFBGA | BGA; Tray | BGA; 96-TFBGA | BGA | ||
| Supply Voltage | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V | 1.425V ~ 1.575V |
