Integrated Silicon Solution, Inc. Memory IS43TR16128B-125KBL

Description
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
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Description
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote
Datasheet
Datasheet Summary
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The IS43TR16128B-125KBL is a 2Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a 128Mx16 configuration. It operates at a standard voltage of 1.5V ¬± 0.075V and supports low voltage operation at 1.35V. The memory chip is designed for high-speed data transfer rates, with a system frequency of up to 1600 MT/s and a CAS latency of 11. It includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, as well as various latency settings. The device is available in a 96-ball BGA package measuring 9mm x 13mm and is suitable for commercial temperature ranges from 0¬8C to +95¬8C. It also features advanced functionalities such as auto self-refresh, partial array self-refresh, and dynamic on-die termination. The IS43TR16128B-125KBL is backward compatible with slower speed options, making it versatile for various applications.

Datasheet Summary
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The IS43TR16128B-125KBL is a 2Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a 128Mx16 configuration. It operates at a standard voltage of 1.5V ¬± 0.075V and supports low voltage operation at 1.35V. The memory chip is designed for high-speed data transfer rates, with a system frequency of up to 1600 MT/s and a CAS latency of 11. It includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, as well as various latency settings. The device is available in a 96-ball BGA package measuring 9mm x 13mm and is suitable for commercial temperature ranges from 0¬8C to +95¬8C. It also features advanced functionalities such as auto self-refresh, partial array self-refresh, and dynamic on-die termination. The IS43TR16128B-125KBL is backward compatible with slower speed options, making it versatile for various applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-1483-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

Buy Now Datasheet
Memory - SDRAM - IS43TR16128B-125KBL - 714592-IS43TR16128B-125KBL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43TR16128B-125KBL
714592-IS43TR16128B-125KBL
Memory - SDRAM - IS43TR16128B-125KBL 714592-IS43TR16128B-125KBL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 714592-IS43TR16128B- 125KBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR3 Memory Type: Volatile Memory Size: 2Gb (128M x 16) Access Time: 20ns Categories: Integrated Circuits Supplier Device Package: 96-TWBGA (9x13) Temperature Range - Operating: 0°C ~ 95°C Memory Format: DRAM Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 96-TFBGA Alternative Parts (Cross-Reference): MT41J128M16HA-125IT: D; IS43TR16128B-125KBL- TR; MT41J128M16HA-125 AIT:D; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 190 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.425V ~ 1.575V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 714592-IS43TR16128B-125KBL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 20ns
Categories: Integrated Circuits
Supplier Device Package: 96-TWBGA (9x13)
Temperature Range - Operating: 0°C ~ 95°C
Memory Format: DRAM
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 96-TFBGA
Alternative Parts (Cross-Reference): MT41J128M16HA-125IT:D; IS43TR16128B-125KBL-TR; MT41J128M16HA-125 AIT:D;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 190
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.425V ~ 1.575V

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 96TWBGA

IC DRAM 2GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43TR16128B-125KBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43TR16128B-125KBL
Integrated Circuits (ICs) - Memory IS43TR16128B-125KBL
IC DRAM 2GBIT PARALLEL 96TWBGA

IC DRAM 2GBIT PARALLEL 96TWBGA

Supplier's Site
Memory - IS43TR16128B-125KBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 96TWBGA

IC DRAM 2GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-1483-ND 714592-IS43TR16128B-125KBL IS43TR16128B-125KBL IS43TR16128B-125KBL IS43TR16128B-125KBL IS43TR16128B-125KBL
Product Name Memory Memory - SDRAM - IS43TR16128B-125KBL Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR3; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 96-TFBGA 96-TFBGA BGA BGA; 96-TFBGA
Supply Voltage 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V
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