Integrated Silicon Solution, Inc. Memory IS43R86400E-6TLI

Description
IC DRAM 512MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 512MBIT PAR 66TSOP II
Datasheet

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IC DRAM 512MBIT PAR 66TSOP II

IC DRAM 512MBIT PAR 66TSOP II

Supplier's Site Datasheet
Memory - IS43R86400E-6TLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 66-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43R86400E-6TLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R86400E-6TLI
Integrated Circuits (ICs) - Memory IS43R86400E-6TLI
IC DRAM 512MBIT PAR 66TSOP II

IC DRAM 512MBIT PAR 66TSOP II

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43R86400E-6TLI IS43R86400E-6TLI IS43R86400E-6TLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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