Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS43R86400E-6TLI

Description
IC DRAM 512MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 512MBIT PAR 66TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS43R86400E-6TLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R86400E-6TLI
Integrated Circuits (ICs) - Memory IS43R86400E-6TLI
IC DRAM 512MBIT PAR 66TSOP II

IC DRAM 512MBIT PAR 66TSOP II

Supplier's Site
Memory - IS43R86400E-6TLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 66-TSOP II

Buy Now Datasheet
IC DRAM 512MBIT PAR 66TSOP II

IC DRAM 512MBIT PAR 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43R86400E-6TLI IS43R86400E-6TLI IS43R86400E-6TLI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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