IC DRAM 512MBIT PAR 60TFBGA Product overview: IS43R86400E-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43R86400E-6BLI
Category: DRAM
Win Source Part Number: 1447344-IS43R86400E-
Manufacturer: ISSI, Integrated Silicon Solution Inc
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43R86400E-6BLI | 1447344-IS43R86400E-6BLI | IS43R86400E-6BLI | IS43R86400E-6BLI | IS43R86400E-6BLI |
| Product Name | Memory IC and Storage Component | DRAM | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | |
| Cycle Time | 15 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
