Integrated Silicon Solution, Inc. Memory IS43R86400E-6BL

Description
IC DRAM 512MBIT PARALLEL 60TFBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43R86400E-6BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R86400E-6BL
Integrated Circuits (ICs) - Memory IS43R86400E-6BL
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site
Memory - IS43R86400E-6BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43R86400E-6BL IS43R86400E-6BL IS43R86400E-6BL
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Data Rate 166 MHz
Unlock Full Specs
to access all available technical data

Similar Products

 - 27C512-55DM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category EPROM
Logic Family CMOS
Package Type DIP; CDIP28
View Details
4 suppliers
Memory - 579287-001-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details