IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)
| Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43R86400E-5BLI | IS43R86400E-5BLI | IS43R86400E-5BLI |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 200 MHz | ||
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
