SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43R86400E-5BL | IS43R86400E-5BL | IS43R86400E-5BL |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
