SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 60TFBGA
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 60TFBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-IS43R86400E-5BI-ND | IS43R86400E-5BI | IS43R86400E-5BI | IS43R86400E-5BI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
| Package Type | 60-TFBGA | BGA | BGA; 60-TFBGA |
