Integrated Silicon Solution, Inc. Memory IS43R86400E-5BI

Description
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43R86400E-5BI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - IS43R86400E-5BI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS43R86400E-5BI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS43R86400E-5BI
Integrated Circuits (ICs) - Memory - Memory IS43R86400E-5BI
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS43R86400E-5BI-ND IS43R86400E-5BI IS43R86400E-5BI IS43R86400E-5BI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA; 60-TFBGA BGA
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