Integrated Silicon Solution, Inc. Memory IS43R32800D-5BLI-TR

Description
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
Datasheet
Description
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43R32800D-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet
IC DRAM 256MBIT PAR 144LFBGA

IC DRAM 256MBIT PAR 144LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43R32800D-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32800D-5BLI-TR
Integrated Circuits (ICs) - Memory IS43R32800D-5BLI-TR
IC DRAM 256MBIT PAR 144LFBGA

IC DRAM 256MBIT PAR 144LFBGA

Supplier's Site
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) - 77T0583 - Newark, An Avnet Company
Chicago, IL, United States
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi)
77T0583
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) 77T0583
256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R

256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43R32800D-5BLI-TR IS43R32800D-5BLI-TR IS43R32800D-5BLI-TR 77T0583
Product Name Memory Memory Integrated Circuits (ICs) - Memory 256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi)
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S29AJC - Rochester Electronics
Specs
Memory Category PROM
Package Type PLCC; PLCC
View Details
4 suppliers
Memory - NMC27C256BN150 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Memory - AS4DDR264M72 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
View Details
Flash Memory - 1882828 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details