Integrated Silicon Solution, Inc. Memory IS43R32800D-5BLI-TR

Description
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
Datasheet
Description
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43R32800D-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet
IC DRAM 256MBIT PAR 144LFBGA

IC DRAM 256MBIT PAR 144LFBGA

Supplier's Site Datasheet
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) - 77T0583 - Newark, An Avnet Company
Chicago, IL, United States
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi)
77T0583
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) 77T0583
256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R

256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R

Supplier's Site
Integrated Circuits (ICs) - Memory - IS43R32800D-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32800D-5BLI-TR
Integrated Circuits (ICs) - Memory IS43R32800D-5BLI-TR
IC DRAM 256MBIT PAR 144LFBGA

IC DRAM 256MBIT PAR 144LFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43R32800D-5BLI-TR IS43R32800D-5BLI-TR 77T0583 IS43R32800D-5BLI-TR
Product Name Memory Memory 256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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