Integrated Silicon Solution, Inc. 256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) IS43R32800D-5BLI-TR

Description
256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R
Datasheet
Description
256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R
Datasheet

Suppliers

Company
Product
Description
Supplier Links
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) - 77T0583 - Newark, An Avnet Company
Chicago, IL, United States
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi)
77T0583
256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) 77T0583
256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R

256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12Mm x 12mm) RoHS, IT, T&R

Supplier's Site
Memory - IS43R32800D-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet
IC DRAM 256MBIT PAR 144LFBGA

IC DRAM 256MBIT PAR 144LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43R32800D-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32800D-5BLI-TR
Integrated Circuits (ICs) - Memory IS43R32800D-5BLI-TR
IC DRAM 256MBIT PAR 144LFBGA

IC DRAM 256MBIT PAR 144LFBGA

Supplier's Site

Technical Specifications

  Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 77T0583 IS43R32800D-5BLI-TR IS43R32800D-5BLI-TR IS43R32800D-5BLI-TR
Product Name 256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C256-20/P230 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - 28055481 B - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers