IC DRAM 128MBIT PAR 144LFBGA Product overview: IS43R32400E-5BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43R32400E-5BLI
Category: DRAM
Win Source Part Number: 1447332-IS43R32400E-
Manufacturer: ISSI, Integrated Silicon Solution Inc
SDRAM - DDR Memory IC 128Mb (4M x 32) Parallel 200MHz 700ps 144-LFBGA (12x12)
128M, 2.5v, DDR, 4Mx32, 200MHz @ CL3, 144-ball BGA (12Mm x 12mm) RoHS, IT
SDRAM - DDR Memory IC 128Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
IC DRAM 128MBIT PAR 144LFBGA
IC DRAM 128MBIT PAR 144LFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43R32400E-5BLI | 1447332-IS43R32400E-5BLI | IS43R32400E-5BLI-ND | 77T0578 | IS43R32400E-5BLI | IS43R32400E-5BLI | IS43R32400E-5BLI |
| Product Name | Memory IC and Storage Component | DRAM | Memory | 128M, 2.5V, Ddr, 4Mx32, 200Mhz @ Cl3, 144-Ball Bga (12Mm X 12Mm) Rohs, It Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | ||
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | ||
| Number of Words | 1000 k |
