Integrated Silicon Solution, Inc. Memory IS43R32400E-4BL-TR

Description
SDRAM - DDR Memory IC 128Mbit Parallel 250 MHz 700 ps 144-LFBGA (12x12)
Datasheet
Description
SDRAM - DDR Memory IC 128Mbit Parallel 250 MHz 700 ps 144-LFBGA (12x12)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43R32400E-4BL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 128Mbit Parallel 250 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 128Mbit Parallel 250 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet
IC DRAM 128MBIT PAR 144LFBGA

IC DRAM 128MBIT PAR 144LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43R32400E-4BL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32400E-4BL-TR
Integrated Circuits (ICs) - Memory IS43R32400E-4BL-TR
IC DRAM 128MBIT PAR 144LFBGA

IC DRAM 128MBIT PAR 144LFBGA

Supplier's Site
128M, 2.5V, Ddr, 4Mx32, 250Mhz @ Cl4, 144-Ball Bga (12Mm X 12Mm) Rohs, T&r Integrated Silicon Solution (Issi) - 77T0575 - Newark, An Avnet Company
Chicago, IL, United States
128M, 2.5V, Ddr, 4Mx32, 250Mhz @ Cl4, 144-Ball Bga (12Mm X 12Mm) Rohs, T&r Integrated Silicon Solution (Issi)
77T0575
128M, 2.5V, Ddr, 4Mx32, 250Mhz @ Cl4, 144-Ball Bga (12Mm X 12Mm) Rohs, T&r Integrated Silicon Solution (Issi) 77T0575
128M, 2.5v, DDR, 4Mx32, 250MHz @ CL4, 144-ball BGA (12Mm x 12mm) RoHS, T&R

128M, 2.5v, DDR, 4Mx32, 250MHz @ CL4, 144-ball BGA (12Mm x 12mm) RoHS, T&R

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43R32400E-4BL-TR IS43R32400E-4BL-TR IS43R32400E-4BL-TR 77T0575
Product Name Memory Memory Integrated Circuits (ICs) - Memory 128M, 2.5V, Ddr, 4Mx32, 250Mhz @ Cl4, 144-Ball Bga (12Mm X 12Mm) Rohs, T&r Integrated Silicon Solution (Issi)
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits
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