The IS43R16320D-6BLI-TR is a 512Mb DDR SDRAM memory device from Quarktwin Technology Ltd. It operates at a voltage of 2.5V ± 0.2V and features a double-data rate architecture, allowing for two data transfers per clock cycle. The memory is organized into four internal banks, enabling concurrent operations and efficient data access. This device supports various burst lengths (2, 4, and 8) and types (sequential and interleave), with programmable CAS latency options of 2, 2.5, and 3. It is compatible with SSTL_2 I/O standards and includes features such as auto refresh and self-refresh modes. The IS43R16320D-6BLI-TR is available in multiple configurations, including 16Mx32, 32Mx16, and 64Mx8, and comes in lead-free packaging suitable for commercial and industrial temperature ranges. Engineers considering this memory IC should note its high-speed performance, with maximum clock frequencies of 167 MHz at CL=3 and 200 MHz at CL=2. The device is suitable for applications requiring reliable and efficient memory solutions.
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 002006-IS43R16320D-6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 700ps
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 60-TFBGA (8x13)
Supply Voltage - Operating: 2.3 V to 2.7 V
Memory Format: DRAM
Max Frequency: 166MHz
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PAR 60TFBGA Product overview: IS43R16320D-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43R16320D-6BLI
IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 002006-IS43R16320D-6BLI-TR | IS43R16320D-6BLI-TR-ND | IS43R16320D-6BLI-TR | 774-IS43R16320D-6BLI-TR | IS43R16320D-6BLI-TR | IS43R16320D-6BLI-TR | IS43R16320D-6BLI-TR |
| Product Name | Memory - SDRAM - IS43R16320D-6BLI-TR | Memory | Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | SDRAM - DDR; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Package Type | BGA; 60-TFBGA (8x13) | 60-TFBGA | 60-TFBGA | BGA; Tape & Reel (TR) | BGA | BGA; 60-TFBGA | |
| Supply Voltage | 2.3 V ~ 2.7 V | 2.3V ~ 2.7V | 2.3V ~ 2.7V | 2.3V ~ 2.7V | 2.3V ~ 2.7V | 2.3V ~ 2.7V |
