Integrated Silicon Solution, Inc. Memory IS43QR16512A-083TBLI

Description
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.2GHz 19ns 96-TWBGA (10x14)
  • Memory - 706-IS43QR16512A-083TBLI-ND - DigiKey
    DigiKey
  • Memory IC and Storage Component - 774-IS43QR16512A-083TBLI - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - IS43QR16512A-083TBLI - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory - DDR - IS43QR16512A-083TBLI - 940210-IS43QR16512A-083TBLI - Win Source Electronics
    Win Source Electronics
  • Integrated Circuits (ICs) - Memory - IS43QR16512A-083TBLI - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - IS43QR16512A-083TBLI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS43QR16512A-083TBLI - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.2GHz 19ns 96-TWBGA (10x14)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43QR16512A-083TBLI-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
706-IS43QR16512A-083TBLI-ND
Memory 706-IS43QR16512A-083TBLI-ND
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.2GHz 19ns 96-TWBGA (10x14)

SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.2GHz 19ns 96-TWBGA (10x14)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS43QR16512A-083TBLI - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43QR16512A-083TBLI
Memory IC and Storage Component 774-IS43QR16512A-083TBLI
IC DRAM 8GBIT PARALLEL 96TWBGA Product overview: IS43QR16512A-083TBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43QR16512A-083 TBLI can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96TWBGA Product overview: IS43QR16512A-083TBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43QR16512A-083TBLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS43QR16512A-083TBLI - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
IS43QR16512A-083TBLI
Memory IS43QR16512A-083TBLI
IC DRAM 8GBIT PARALLEL 96TWBGA

IC DRAM 8GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Memory - DDR - IS43QR16512A-083TBLI - 940210-IS43QR16512A-083TBLI - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - IS43QR16512A-083TBLI
940210-IS43QR16512A-083TBLI
Memory - DDR - IS43QR16512A-083TBLI 940210-IS43QR16512A-083TBLI
Win Source Part Number: 940210-IS43QR16512A- 083TBLI Series: * Categories: Memory

Win Source Part Number: 940210-IS43QR16512A-083TBLI
Series: *
Categories: Memory

Buy Now
Integrated Circuits (ICs) - Memory - IS43QR16512A-083TBLI - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43QR16512A-083TBLI
Integrated Circuits (ICs) - Memory IS43QR16512A-083TBLI
IC DRAM 8GBIT PARALLEL 96TWBGA

IC DRAM 8GBIT PARALLEL 96TWBGA

Supplier's Site
Memory - IS43QR16512A-083TBLI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS43QR16512A-083TBLI
Memory IS43QR16512A-083TBLI
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.2 GHz 19 ns 96-TWBGA (10x14)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.2 GHz 19 ns 96-TWBGA (10x14)

Buy Now Datasheet
Memory - IS43QR16512A-083TBLI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS43QR16512A-083TBLI
Memory IS43QR16512A-083TBLI
IC DRAM 8GBIT PARALLEL 96TWBGA

IC DRAM 8GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS43QR16512A-083TBLI-ND 774-IS43QR16512A-083TBLI IS43QR16512A-083TBLI 940210-IS43QR16512A-083TBLI IS43QR16512A-083TBLI IS43QR16512A-083TBLI IS43QR16512A-083TBLI
Product Name Memory Memory IC and Storage Component Memory Memory - DDR - IS43QR16512A-083TBLI Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip SDRAM - DDR4; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 C (-40 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-TFBGA 96-TFBGA BGA BGA; 96-TFBGA
Supply Voltage 1.14V ~ 1.26V 1.14 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V
Access Time 0.1750 ns 19 ns 19 ns 19 ns 19 ns
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