4G, 1.2V, DDR4, 256Mx16, 2666MT/ Product overview: IS43QR16256B-075UBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.2V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43QR16256B-075
Category: DRAM
Win Source Part Number: 1446484-IS43QR16256B
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 4GBIT POD 96TWBGA
4G, 1.2V, DDR4, 256Mx16, 2666MT/
SDRAM - DDR4 Memory IC 4Gbit POD 1.333 GHz 19 ns 96-TWBGA (7.5x13.5)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43QR16256B-075UBL | 1446484-IS43QR16256B-075UBL | 706-IS43QR16256B-075UBL-ND | IS43QR16256B-075UBL | IS43QR16256B-075UBL |
| Product Name | 1.2V Memory IC and Storage Component | DRAM | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 0.1700 ns | 19 ns | |||
| Operating Temperature | 0 C (32 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | ||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | ||
| Number of Words | 32000 k |
