Integrated Silicon Solution, Inc. Memory IS43LR32800H-6BLI

Description
IC DRAM 256MBIT PAR 90TFBGA
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Description
IC DRAM 256MBIT PAR 90TFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43LR32800H-6BLI-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 256MBIT PAR 90TFBGA

IC DRAM 256MBIT PAR 90TFBGA

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43LR32800H-6BLI
Integrated Circuits (ICs) - Memory - Memory IS43LR32800H-6BLI
256M, 1.8V, Mobile DDR, 8Mx32, 1

256M, 1.8V, Mobile DDR, 8Mx32, 1

Supplier's Site
Memory - IS43LR32800H-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit LVCMOS 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 256Mbit LVCMOS 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS43LR32800H-6BLI-ND IS43LR32800H-6BLI IS43LR32800H-6BLI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA 5.5 ns BGA; 90-TFBGA
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