Integrated Silicon Solution, Inc. Memory IS43LR32640B-6BLI

Description
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR32640B-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43LR32640B-6BLI
Integrated Circuits (ICs) - Memory - Memory IS43LR32640B-6BLI
2G, 1.8V, Mobile DDR, 64Mx32, 16

2G, 1.8V, Mobile DDR, 64Mx32, 16

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number IS43LR32640B-6BLI IS43LR32640B-6BLI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C010-55DM/B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 55 ns
Density 1000 kbits
View Details
2 suppliers
Memory - RAM - MT5C1005C-25L-883C - 1204596-MT5C1005C-25L-883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Memory IC and Storage Component - 774-HYB18T256800AF-5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details