Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS43LR32640B-6BLI-TR

Description
2G, 1.8V, Mobile DDR, 64Mx32, 16
Datasheet
Description
2G, 1.8V, Mobile DDR, 64Mx32, 16
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43LR32640B-6BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS43LR32640B-6BLI-TR
2G, 1.8V, Mobile DDR, 64Mx32, 16

2G, 1.8V, Mobile DDR, 64Mx32, 16

Supplier's Site
Memory - IS43LR32640B-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS43LR32640B-6BLI-TR IS43LR32640B-6BLI-TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Cycle Time 15 ns
Density 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Controllers - DP8422AVX-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24C01-I/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details