IC DRAM 2GBIT PARALLEL 90WBGA Product overview: IS43LR32640A-6BLI-TR
Win Source Part Number: 1356824-IS43LR32640A
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 36 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 90-LFBGA
Supplier Device Package: 90-WBGA (8x13)
Base Product Number: IS43LR32640
Technology: SDRAM - DDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0036
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.7V ~ 1.95V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 2Gbit
Memory Organization: 64M x 32
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5 ns
IC DRAM 2GBIT PARALLEL 90WBGA
SDRAM - DDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-WBGA (8x13)
IC DRAM 2GBIT PARALLEL 90WBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43LR32640A-6BLI-TR | 1356824-IS43LR32640A-6BLI-TR | IS43LR32640A-6BLI-TR | IS43LR32640A-6BLI-TR | IS43LR32640A-6BLI-TR |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns |
| Cycle Time | 15 ns | 15 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Address Bus Width | 32 bits |