Integrated Silicon Solution, Inc. Memory IS43LR32320B-6BLI-TR

Description
IC DRAM 64MBIT PARALLEL 90LFBGA
Datasheet
Description
IC DRAM 64MBIT PARALLEL 90LFBGA
Datasheet

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Description
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IC DRAM 64MBIT PARALLEL 90LFBGA

IC DRAM 64MBIT PARALLEL 90LFBGA

Supplier's Site Datasheet
Memory - IS43LR32320B-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-LFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-LFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR32320B-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR32320B-6BLI-TR
Integrated Circuits (ICs) - Memory IS43LR32320B-6BLI-TR
IC DRAM 64MBIT PARALLEL 90LFBGA

IC DRAM 64MBIT PARALLEL 90LFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43LR32320B-6BLI-TR IS43LR32320B-6BLI-TR IS43LR32320B-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 64000 kbits 64000 kbits 64000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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