Integrated Silicon Solution, Inc. Memory IS43LR32200B-6BLI

Description
SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR32200B-6BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR32200B-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR32200B-6BLI
Integrated Circuits (ICs) - Memory IS43LR32200B-6BLI
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site
Memory - IS43LR32200B-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR32200B-6BLI-ND IS43LR32200B-6BLI IS43LR32200B-6BLI IS43LR32200B-6BLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory IC and Storage Component - 774-S27KS0641DPBHB020 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip; SRAM Chip
Access Time 36 ns
Operating Temperature -40 C (-40 F)
View Details
4 suppliers
Memory - Memory - Controllers - N82C08-10 - 886770-N82C08-10 - Win Source Electronics
Specs
Memory Category DRAM Chip
View Details
2 suppliers
FIFOs Memory - MPD23698RHA - Quarktwin Technology Ltd.
View Details
2 suppliers