The IS43LR32160B-6BLI is a 4M x 32 bits Mobile DDR SDRAM memory chip from Quarktwin Technology Ltd., designed for high-speed operation with a double-data-rate architecture. It features a total capacity of 536,870,912 bits and is organized into four banks, allowing for concurrent operations. The device operates with a JEDEC standard power supply of 1.8V for both VDD and VDDQ. This memory chip supports a maximum clock frequency of 166 MHz and a data rate of up to 333 Mbps per pin. It offers various programmable features, including CAS latency options of 2 or 3, burst lengths of 2, 4, 8, or 16, and both sequential and interleave burst types. The IS43LR32160B-6BLI is compatible with LVCMOS voltage levels and includes power-saving features such as Partial Array Self Refresh and Deep Power Down Mode. The product is available in a 90-ball BGA package and is suitable for commercial applications with an operating temperature range of 0¬8C to +70¬8C. This memory solution is ideal for applications requiring efficient performance and low power consumption.
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS43LR32160B-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LR32160B-6BL
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 002001-IS43LR32160B-
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - Mobile DDR
Memory Type: Volatile
Memory Size: 512Mb (16M x 32)
Access Time: 5.5ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 90-TFBGA (8x13)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: DRAM
Max Frequency: 166MHz
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
IS43LR32160 - 512M, 1.8V, MOBILE
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43LR32160B-6BLI | 002001-IS43LR32160B-6BLI | IS43LR32160B-6BLI | IS43LR32160B-6BLI | IS43LR32160B-6BLI | IS43LR32160B-6BLI |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - IS43LR32160B-6BLI | Integrated Circuits (ICs) - Memory | Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | ||
| Access Time | 8 ns | 5.5 ns | 5.5 ns | 5.5 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | |||
| Number of Words | 4000 k |
