SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43LR32160B-6BL-TR | IS43LR32160B-6BL-TR | IS43LR32160B-6BL-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
