Integrated Silicon Solution, Inc. Memory IS43LR32100D-6BLI

Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet

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IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS43LR32100D-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR32100D-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR32100D-6BLI
Integrated Circuits (ICs) - Memory IS43LR32100D-6BLI
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43LR32100D-6BLI IS43LR32100D-6BLI IS43LR32100D-6BLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 32000 kbits 32000 kbits 32000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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