Integrated Silicon Solution, Inc. Memory IS43LR32100D-6BL-TR

Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 90TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS43LR32100D-6BL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR32100D-6BL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR32100D-6BL-TR
Integrated Circuits (ICs) - Memory IS43LR32100D-6BL-TR
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43LR32100D-6BL-TR IS43LR32100D-6BL-TR IS43LR32100D-6BL-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 32000 kbits 32000 kbits 32000 kbits
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28329184 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details
SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 27S47SADM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers