Integrated Silicon Solution, Inc. Memory IS43LR32100C-6BLI-TR

Description
SDRAM - Mobile LPDDR Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR32100C-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 32Mb (1M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory - IS43LR32100C-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43LR32100C-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR32100C-6BLI-TR
Integrated Circuits (ICs) - Memory IS43LR32100C-6BLI-TR
IC DRAM 32MBIT PARALLEL 90TFBGA

IC DRAM 32MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR32100C-6BLI-TR-ND IS43LR32100C-6BLI-TR IS43LR32100C-6BLI-TR IS43LR32100C-6BLI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits 32000 kbits 32000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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