Integrated Silicon Solution, Inc. Memory IS43LR16800F-6BL

Description
SDRAM - Mobile LPDDR Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR16800F-6BL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)

Buy Now Datasheet
Memory - SDRAM - IS43LR16800F-6BL - 710546-IS43LR16800F-6BL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43LR16800F-6BL
710546-IS43LR16800F-6BL
Memory - SDRAM - IS43LR16800F-6BL 710546-IS43LR16800F-6BL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 710546-IS43LR16800F- 6BL Packaging: Tray Mounting Style: SMD Technology: SDRAM - Mobile LPDDR Memory Type: Volatile Memory Size: 128Mb (8M x 16) Access Time: 5.5ns Categories: Integrated Circuits Supplier Device Package: 60-TFBGA (8x10) Status: Obsolete Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Low Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 300 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 710546-IS43LR16800F-6BL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 128Mb (8M x 16)
Access Time: 5.5ns
Categories: Integrated Circuits
Supplier Device Package: 60-TFBGA (8x10)
Status: Obsolete
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 300
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

Buy Now
Memory - IS43LR16800F-6BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR16800F-6BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR16800F-6BL
Integrated Circuits (ICs) - Memory IS43LR16800F-6BL
IC DRAM 128MBIT PARALLEL 60TFBGA

IC DRAM 128MBIT PARALLEL 60TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 60TFBGA

IC DRAM 128MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR16800F-6BL-ND 710546-IS43LR16800F-6BL IS43LR16800F-6BL IS43LR16800F-6BL IS43LR16800F-6BL
Product Name Memory Memory - SDRAM - IS43LR16800F-6BL Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 60-TFBGA BGA; 60-TFBGA BGA
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