Integrated Silicon Solution, Inc. Memory IS43LR16320B-6BLI-TR

Description
IC DRAM 512MBIT PARALLEL 60TFBGA
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Description
IC DRAM 512MBIT PARALLEL 60TFBGA
Request a Quote Datasheet

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IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - IS43LR16320B-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

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IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43LR16320B-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR16320B-6BLI-TR
Integrated Circuits (ICs) - Memory IS43LR16320B-6BLI-TR
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR16320B-6BLI-TR IS43LR16320B-6BLI-TR IS43LR16320B-6BLI-TR IS43LR16320B-6BLI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SDRAM - Mobile LPDDR; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Data Rate 166 MHz 166 MHz
Access Time 5.5 ns 5.5 ns 5.5 ns 5.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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