Integrated Silicon Solution, Inc. Memory IS43LR16320B-6BLI-TR

Description
IC DRAM 512MBIT PARALLEL 60TFBGA
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Description
IC DRAM 512MBIT PARALLEL 60TFBGA
Request a Quote Datasheet

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Product
Description
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IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43LR16320B-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR16320B-6BLI-TR
Integrated Circuits (ICs) - Memory IS43LR16320B-6BLI-TR
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - IS43LR16320B-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

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Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR16320B-6BLI-TR IS43LR16320B-6BLI-TR IS43LR16320B-6BLI-TR IS43LR16320B-6BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SDRAM - Mobile LPDDR; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz 166 MHz
Access Time 5.5 ns 5.5 ns 5.5 ns 5.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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