Integrated Silicon Solution, Inc. Memory IS43LR16200C-6BLI-TR

Description
SDRAM - Mobile LPDDR Memory IC 32Mb (2M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
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Description
SDRAM - Mobile LPDDR Memory IC 32Mb (2M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
Request a Quote
Datasheet
Datasheet Summary
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The IS43LR16200C-6BLI-TR is a 32Mbit Mobile DDR SDRAM memory chip organized as 2 banks of 1,048,576 words x 16 bits. It operates at a power supply of 1.8V and supports a maximum clock frequency of 166MHz, achieving data rates of up to 333Mbps per pin. The device features a double-data-rate architecture, allowing for high-speed operation with fully synchronous operations referenced to both the rising and falling edges of the clock. This memory chip includes various programmable features such as CAS latency options of 2 or 3, burst lengths of 2, 4, 8, or 16, and supports both sequential and interleave burst types. It also offers power-saving modes, including Partial Array Self Refresh and Deep Power Down Mode, making it suitable for energy-efficient applications. The device is packaged in a 60-ball BGA format and is compatible with LVCMOS input/output levels. Engineers considering this memory for their projects should note its specifications for refresh periods, auto and self-refresh capabilities, and the ability to handle concurrent operations across its two internal banks.

Datasheet Summary
Powered by GS/AI

The IS43LR16200C-6BLI-TR is a 32Mbit Mobile DDR SDRAM memory chip organized as 2 banks of 1,048,576 words x 16 bits. It operates at a power supply of 1.8V and supports a maximum clock frequency of 166MHz, achieving data rates of up to 333Mbps per pin. The device features a double-data-rate architecture, allowing for high-speed operation with fully synchronous operations referenced to both the rising and falling edges of the clock. This memory chip includes various programmable features such as CAS latency options of 2 or 3, burst lengths of 2, 4, 8, or 16, and supports both sequential and interleave burst types. It also offers power-saving modes, including Partial Array Self Refresh and Deep Power Down Mode, making it suitable for energy-efficient applications. The device is packaged in a 60-ball BGA format and is compatible with LVCMOS input/output levels. Engineers considering this memory for their projects should note its specifications for refresh periods, auto and self-refresh capabilities, and the ability to handle concurrent operations across its two internal banks.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR16200C-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 32Mb (2M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 32Mb (2M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)

Buy Now Datasheet
Memory - IS43LR16200C-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 32Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR16200C-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR16200C-6BLI-TR
Integrated Circuits (ICs) - Memory IS43LR16200C-6BLI-TR
IC DRAM 32MBIT PARALLEL 60TFBGA

IC DRAM 32MBIT PARALLEL 60TFBGA

Supplier's Site
IC DRAM 32MBIT PARALLEL 60TFBGA

IC DRAM 32MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR16200C-6BLI-TR-ND IS43LR16200C-6BLI-TR IS43LR16200C-6BLI-TR IS43LR16200C-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits 32000 kbits 32000 kbits
Package Type 60-TFBGA BGA; 60-TFBGA BGA
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