Integrated Silicon Solution, Inc. Memory IS43LR16160G-6BL

Description
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR16160G-6BL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 60-TFBGA (8x10)

Buy Now Datasheet
Memory - SDRAM - IS43LR16160G-6BL - 806366-IS43LR16160G-6BL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43LR16160G-6BL
806366-IS43LR16160G-6BL
Memory - SDRAM - IS43LR16160G-6BL 806366-IS43LR16160G-6BL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 806366-IS43LR16160G- 6BL Packaging: Tray Mounting Style: SMD Technology: SDRAM - Mobile LPDDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Access Time: 5.5ns Supplier Device Package: 60-TFBGA (8x10) Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 300 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 806366-IS43LR16160G-6BL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 5.5ns
Supplier Device Package: 60-TFBGA (8x10)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 300
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

Buy Now Datasheet
Memory - IS43LR16160G-6BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 60TFBGA

IC DRAM 256MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43LR16160G-6BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR16160G-6BL
Integrated Circuits (ICs) - Memory IS43LR16160G-6BL
IC DRAM 256MBIT PARALLEL 60TFBGA

IC DRAM 256MBIT PARALLEL 60TFBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR16160G-6BL-ND 806366-IS43LR16160G-6BL IS43LR16160G-6BL IS43LR16160G-6BL IS43LR16160G-6BL
Product Name Memory Memory - SDRAM - IS43LR16160G-6BL Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 60-TFBGA BGA; 60-TFBGA BGA
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