256M, 1.2/1.8V, LPDDR2, 8Mx32, 4 Product overview: IS43LD32800B-25BLI-T
IC DRAM 256MBIT PAR 134TFBGA
Win Source Part Number: 1382338-IS43LD32800B
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tape & Reel (TR)
Technology: SDRAM - Mobile LPDDR2-S4
Memory Type: Volatile
Memory Size: 256Mbit
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)
Temperature Range - Operating: -40°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Fake Threat In the Open Market: 53 pct.
REACH Status: REACH Unaffected
Mfr: ISSI, Integrated Silicon Solution Inc
Memory Organization: 8M x 32
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Standard Package: 2,000 pcs
256M, 1.2/1.8V, LPDDR2, 8Mx32, 4
SDRAM - Mobile LPDDR2-S4 Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-TFBGA (10x11.5)
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43LD32800B-25BLI-TR | 706-IS43LD32800B-25BLI-TR-ND | 1382338-IS43LD32800B-25BLI-TR | IS43LD32800B-25BLI-TR | IS43LD32800B-25BLI-TR |
| Product Name | 1.8V Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 10 ns | 5.5 ns | 5.5 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | |
| Number of Words | 2000 k |