Integrated Silicon Solution, Inc. Memory IS43LD32800B-25BLI-TR

Description
IC DRAM 256MBIT PAR 134TFBGA
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Description
IC DRAM 256MBIT PAR 134TFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43LD32800B-25BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 256MBIT PAR 134TFBGA

IC DRAM 256MBIT PAR 134TFBGA

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Integrated Circuits (ICs) - Memory - Memory - 1382338-IS43LD32800B-25BLI-TR - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1382338-IS43LD32800B-25BLI-TR
Integrated Circuits (ICs) - Memory - Memory 1382338-IS43LD32800B-25BLI-TR
Win Source Part Number: 1382338-IS43LD32800B -25BLI-TR Category: Integrated Circuits (ICs)>Memory>Memory Package: Tape & Reel (TR) Technology: SDRAM - Mobile LPDDR2-S4 Memory Type: Volatile Memory Size: 256Mbit Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5) Temperature Range - Operating: -40°C ~ 85°C (TC) Memory Format: DRAM Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: HSUL_12 Fake Threat In the Open Market: 53 pct. REACH Status: REACH Unaffected Mfr: ISSI, Integrated Silicon Solution Inc Memory Organization: 8M x 32 Moisture Sensitivity Level (MSL): 3 (168 Hours) Standard Package: 2,000 pcs

Win Source Part Number: 1382338-IS43LD32800B-25BLI-TR
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tape & Reel (TR)
Technology: SDRAM - Mobile LPDDR2-S4
Memory Type: Volatile
Memory Size: 256Mbit
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)
Temperature Range - Operating: -40°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Fake Threat In the Open Market: 53 pct.
REACH Status: REACH Unaffected
Mfr: ISSI, Integrated Silicon Solution Inc
Memory Organization: 8M x 32
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Standard Package: 2,000 pcs

Buy Now Datasheet
1.8V Memory IC and Storage Component - 774-IS43LD32800B-25BLI-TR - ERSAELECTRONICS PTE. LTD.
Singapore
1.8V Memory IC and Storage Component
774-IS43LD32800B-25BLI-TR
1.8V Memory IC and Storage Component 774-IS43LD32800B-25BLI-TR
256M, 1.2/1.8V, LPDDR2, 8Mx32, 4 Product overview: IS43LD32800B-25BLI-T R from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LD32800B-25B LI-TR can be used for catalog matching and distributor lookup.

256M, 1.2/1.8V, LPDDR2, 8Mx32, 4 Product overview: IS43LD32800B-25BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LD32800B-25BLI-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
SDRAM - Mobile LPDDR2-S4 Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-TFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4 Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-TFBGA (10x11.5)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS43LD32800B-25BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS43LD32800B-25BLI-TR
256M, 1.2/1.8V, LPDDR2, 8Mx32, 4

256M, 1.2/1.8V, LPDDR2, 8Mx32, 4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS43LD32800B-25BLI-TR-ND 1382338-IS43LD32800B-25BLI-TR 774-IS43LD32800B-25BLI-TR IS43LD32800B-25BLI-TR IS43LD32800B-25BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory 1.8V Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 134-TFBGA BGA; 134-TFBGA BGA
Supply Voltage 1.14V ~ 1.3V, 1.7V ~ 1.95V 1.14V ~ 1.3V~ 1.7V ~ 1.95V 1.7~1.14 1.14V ~ 1.3V, 1.7V ~ 1.95V -40degC ~ 85degC (TC)
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