Integrated Silicon Solution, Inc. DRAM IS43LD32128B-25BLI

Description
Category: DRAM Win Source Part Number: 1447249-IS43LD32128B -25BLI Manufacturer: ISSI, Integrated Silicon Solution Inc
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Description
Category: DRAM Win Source Part Number: 1447249-IS43LD32128B -25BLI Manufacturer: ISSI, Integrated Silicon Solution Inc
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1447249-IS43LD32128B-25BLI - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1447249-IS43LD32128B -25BLI Manufacturer: ISSI, Integrated Silicon Solution Inc

Category: DRAM
Win Source Part Number: 1447249-IS43LD32128B-25BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc

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Memory - 706-IS43LD32128B-25BLI-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 4GBIT HSUL 134TFBGA

IC DRAM 4GBIT HSUL 134TFBGA

Buy Now Datasheet
1.8V Memory IC and Storage Component - 774-IS43LD32128B-25BLI - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1.8V Memory IC and Storage Component
774-IS43LD32128B-25BLI
1.8V Memory IC and Storage Component 774-IS43LD32128B-25BLI
4G, 1.2/1.8V, LPDDR2, 128Mx32, 4 Product overview: IS43LD32128B-25BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LD32128B-25B LI can be used for catalog matching and distributor lookup.

4G, 1.2/1.8V, LPDDR2, 128Mx32, 4 Product overview: IS43LD32128B-25BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LD32128B-25BLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43LD32128B-25BLI
Integrated Circuits (ICs) - Memory - Memory IS43LD32128B-25BLI
4G, 1.2/1.8V, LPDDR2, 128Mx32, 4

4G, 1.2/1.8V, LPDDR2, 128Mx32, 4

Supplier's Site
Memory - IS43LD32128B-25BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2-S4 Memory IC 4Gbit HSUL_12 400 MHz 5.5 ns 134-TFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4 Memory IC 4Gbit HSUL_12 400 MHz 5.5 ns 134-TFBGA (10x11.5)

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1447249-IS43LD32128B-25BLI 706-IS43LD32128B-25BLI-ND 774-IS43LD32128B-25BLI IS43LD32128B-25BLI IS43LD32128B-25BLI
Product Name DRAM Memory 1.8V Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Package Type 134-TFBGA BGA; 134-TFBGA (10x11.5) BGA; 134-TFBGA
Supply Voltage 1.14V ~ 1.3V, 1.7V ~ 1.95V 1.14~1.7 -40degC ~ 85degC (TC) 1.14V ~ 1.3V, 1.7V ~ 1.95V
Access Time 25 ns 5.5 ns
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