Integrated Silicon Solution, Inc. Memory IS43LD32128B-18BPL-TR

Description
SDRAM - Mobile LPDDR2-S4 Memory IC 4Gbit HSUL_12 533 MHz 5.5 ns 168-VFBGA (12x12)
Datasheet
Description
SDRAM - Mobile LPDDR2-S4 Memory IC 4Gbit HSUL_12 533 MHz 5.5 ns 168-VFBGA (12x12)
Datasheet

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SDRAM - Mobile LPDDR2-S4 Memory IC 4Gbit HSUL_12 533 MHz 5.5 ns 168-VFBGA (12x12)

SDRAM - Mobile LPDDR2-S4 Memory IC 4Gbit HSUL_12 533 MHz 5.5 ns 168-VFBGA (12x12)

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IC DRAM

IC DRAM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS43LD32128B-18BPL-TR - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43LD32128B-18BPL-TR
Integrated Circuits (ICs) - Memory - Memory IS43LD32128B-18BPL-TR
IC DRAM 4GBIT HSUL 12 168VFBGA

IC DRAM 4GBIT HSUL 12 168VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43LD32128B-18BPL-TR IS43LD32128B-18BPL-TR IS43LD32128B-18BPL-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns
Operating Temperature 0 to 85 C (32 to 185 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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