Win Source Part Number: 999728-IS43LD16640C-
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 171
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR2-S4
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Voltage - Supply: 1.14V ~ 1.95V
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)
Temperature Range - Operating: -40°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Other Names: IS43LD16640C-25BLI-N
Base Product Number: IS43LD16640
SDRAM - Mobile LPDDR2-S4 Memory IC 1Gb (64M x 16) Parallel 400MHz 134-TFBGA (10x11.5)
IC DRAM 1GBIT PARALLEL 134TFBGA Product overview: IS43LD16640C-25BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LD16640C-25B
IC DRAM 1GBIT PARALLEL 134TFBGA
SDRAM, 1GBIT, 400MHZ, FBGA-134; DRAM Memory Configuration:64M x 16bit; Memory Case Style:FBGA; No. of Pins:134Pins; IC Interface Type:Parallel; Access Time:-; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes
IC DRAM 1GBIT PARALLEL 134TFBGA
SDRAM - Mobile LPDDR2-S4 Memory IC 1Gbit Parallel 400 MHz 134-TFBGA (10x11.5)
IC DRAM 1GBIT PARALLEL 134TFBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 999728-IS43LD16640C-25BLI | 706-1591-ND | 774-IS43LD16640C-25BLI | IS43LD16640C-25BLI | 65AC6015 | IS43LD16640C-25BLI | IS43LD16640C-25BLI | IS43LD16640C-25BLI |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Sdram, 1Gbit, 400Mhz, Fbga-134; Dram Memory Configuration Integrated Silicon Solution (Issi) | Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | SDRAM - Mobile LPDDR2-S4; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Cycle Time | 15 ns | |||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Supply Voltage | 1.14V ~ 1.95V | 1.14V ~ 1.95V | 1.14~1.7 | 1.14V ~ 1.95V | 1.14V ~ 1.95V | 1.14V ~ 1.95V | ||
| Package Type | 134-TFBGA | BGA | FBGA | 134-TFBGA | BGA; 134-TFBGA |
