Integrated Silicon Solution, Inc. Memory IS43DR86400E-3DBLI-TR

Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ns 60-TWBGA (8x10.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ns 60-TWBGA (8x10.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR86400E-3DBLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ns 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ns 60-TWBGA (8x10.5)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60TWBGA

IC DRAM 512MBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR86400E-3DBLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR86400E-3DBLI-TR
Integrated Circuits (ICs) - Memory IS43DR86400E-3DBLI-TR
IC DRAM 512MBIT PARALLEL 60TWBGA

IC DRAM 512MBIT PARALLEL 60TWBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR86400E-3DBLI-TR-ND IS43DR86400E-3DBLI-TR IS43DR86400E-3DBLI-TR IS43DR86400E-3DBLI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA; 60-TFBGA BGA
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