Integrated Silicon Solution, Inc. Memory IS43DR86400E-25DBL-TR

Description
IC DRAM 512MBIT PAR 60TWBGA
Request a Quote Datasheet
Description
IC DRAM 512MBIT PAR 60TWBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43DR86400E-25DBL-TR-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 512MBIT PAR 60TWBGA

IC DRAM 512MBIT PAR 60TWBGA

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43DR86400E-25DBL-TR
Integrated Circuits (ICs) - Memory - Memory IS43DR86400E-25DBL-TR
512M, 1.8V, DDR2, 64Mx8, 400Mhz

512M, 1.8V, DDR2, 64Mx8, 400Mhz

Supplier's Site
SDRAM - DDR2 Memory IC 512Mbit SSTL_18 400 MHz 400 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 512Mbit SSTL_18 400 MHz 400 ps 60-TWBGA (8x10.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS43DR86400E-25DBL-TR-ND IS43DR86400E-25DBL-TR IS43DR86400E-25DBL-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA; 60-TWBGA (8x10.5) BGA; 60-TFBGA
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